Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Tip pachet
PowerFLAT 8 x 8 HV
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Latime
8.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
8.1mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Inaltime
0.9mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 4,05
Buc. (Intr-un pachet de 5) (fara TVA)
€ 4,82
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 4,05
Buc. (Intr-un pachet de 5) (fara TVA)
€ 4,82
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 4,05 | € 20,25 |
25 - 45 | € 3,68 | € 18,40 |
50 - 120 | € 3,46 | € 17,30 |
125 - 245 | € 3,24 | € 16,20 |
250+ | € 3,07 | € 15,35 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Tip pachet
PowerFLAT 8 x 8 HV
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Latime
8.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
8.1mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Inaltime
0.9mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Tara de origine
China