Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
40 V
Tip pachet
PowerFLAT
Dimensiune celula
STripFET F7
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
111 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
5.4mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Latime
6.2mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
0.95mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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3000
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
40 V
Tip pachet
PowerFLAT
Dimensiune celula
STripFET F7
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
111 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
5.4mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Latime
6.2mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
0.95mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.