Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Latime
4.6mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Inaltime
16.4mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
2
P.O.A.
2
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Latime
4.6mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Inaltime
16.4mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Tara de origine
China