Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Latime
4.6mm
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
16.8 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
16.4mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Tara de origine
China
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Each (In a Tube of 50) (cu TVA)
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€ 2,48
Each (In a Tube of 50) (fara TVA)
€ 2,951
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 2,48 | € 124,00 |
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500 - 950 | € 1,81 | € 90,50 |
1000 - 2450 | € 1,76 | € 88,00 |
2500+ | € 1,70 | € 85,00 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Latime
4.6mm
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
16.8 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
16.4mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Tara de origine
China