Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
53 A
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Latime
9.35mm
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
95 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
4.37mm
Forward Diode Voltage
1.5V
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 4,31
Buc. (Pe o rola de 1000) (fara TVA)
€ 5,129
Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 4,31
Buc. (Pe o rola de 1000) (fara TVA)
€ 5,129
Buc. (Pe o rola de 1000) (cu TVA)
1000
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
53 A
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Latime
9.35mm
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
95 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
4.37mm
Forward Diode Voltage
1.5V
Tara de origine
China