Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Lungime
10.4mm
Typical Gate Charge @ Vgs
16.8 nC @ 10 V
Latime
9.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
4.37mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Tara de origine
China
Informatii indisponibile despre stoc
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Buc. (Intr-un pachet de 5) (cu TVA)
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€ 2,96
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,522
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 2,96 | € 14,80 |
25 - 45 | € 2,71 | € 13,55 |
50 - 120 | € 2,41 | € 12,05 |
125 - 245 | € 2,15 | € 10,75 |
250+ | € 2,02 | € 10,10 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Lungime
10.4mm
Typical Gate Charge @ Vgs
16.8 nC @ 10 V
Latime
9.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
4.37mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Tara de origine
China