Documente tehnice
Specificatii
Marca
STMicroelectronicsTransistor Type
PNP
Maximum DC Collector Current
-500 mA
Maximum Collector Emitter Voltage
-300 V
Tip pachet
SOT-32
Timp montare
Through Hole
Maximum Power Dissipation
20.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
10.8 x 7.8 x 2.7mm
Temperatura maxima de lucru
+150 °C
Detalii produs
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
€ 3,50
€ 0,70 Buc. (Intr-un pachet de 5) (fara TVA)
€ 4,16
€ 0,833 Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 3,50
€ 0,70 Buc. (Intr-un pachet de 5) (fara TVA)
€ 4,16
€ 0,833 Buc. (Intr-un pachet de 5) (cu TVA)
5
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 5 | € 0,70 | € 3,50 |
10 - 95 | € 0,58 | € 2,90 |
100 - 495 | € 0,40 | € 2,00 |
500 - 995 | € 0,34 | € 1,70 |
1000+ | € 0,29 | € 1,45 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsTransistor Type
PNP
Maximum DC Collector Current
-500 mA
Maximum Collector Emitter Voltage
-300 V
Tip pachet
SOT-32
Timp montare
Through Hole
Maximum Power Dissipation
20.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
10.8 x 7.8 x 2.7mm
Temperatura maxima de lucru
+150 °C
Detalii produs
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.