Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
60 A
Maximum Collector Emitter Voltage
250 V
Tip pachet
TO-247
Timp montare
Through Hole
Maximum Power Dissipation
180 W
Minimum DC Current Gain
9
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
7 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
20.3 x 15.9 x 5.3mm
Temperatura maxima de lucru
+150 °C
Detalii produs
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Informatii despre stoc temporar indisponibile
€ 303,60
€ 10,12 Each (In a Tube of 30) (fara TVA)
€ 367,36
€ 12,245 Each (In a Tube of 30) (cu TVA)
30
€ 303,60
€ 10,12 Each (In a Tube of 30) (fara TVA)
€ 367,36
€ 12,245 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
60 A
Maximum Collector Emitter Voltage
250 V
Tip pachet
TO-247
Timp montare
Through Hole
Maximum Power Dissipation
180 W
Minimum DC Current Gain
9
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
7 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
20.3 x 15.9 x 5.3mm
Temperatura maxima de lucru
+150 °C
Detalii produs
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


