Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
100 A
Maximum Collector Emitter Voltage
125 V
Tip pachet
ISOTOP
Timp montare
Panel Mount
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Collector Base Voltage
200 V
Maximum Emitter Base Voltage
7 V
Numar pini
4
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
9.1 x 38.2 x 25.5mm
Detalii produs
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
P.O.A.
Each (In a Tube of 75) (fara TVA)
75
P.O.A.
Each (In a Tube of 75) (fara TVA)
Informatii despre stoc temporar indisponibile
75
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
100 A
Maximum Collector Emitter Voltage
125 V
Tip pachet
ISOTOP
Timp montare
Panel Mount
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Collector Base Voltage
200 V
Maximum Emitter Base Voltage
7 V
Numar pini
4
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
9.1 x 38.2 x 25.5mm
Detalii produs
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


