Documente tehnice
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
100 A
Maximum Collector Emitter Voltage
125 V
Tip pachet
ISOTOP
Timp montare
Panel Mount
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Collector Base Voltage
200 V
Maximum Emitter Base Voltage
7 V
Numar pini
4
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
9.1 x 38.2 x 25.5mm
Maximum Collector Emitter Saturation Voltage
1.5 V
Detalii produs
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
P.O.A.
Each (In a Tube of 75) (fara TVA)
75
P.O.A.
Each (In a Tube of 75) (fara TVA)
75
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Documente tehnice
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
100 A
Maximum Collector Emitter Voltage
125 V
Tip pachet
ISOTOP
Timp montare
Panel Mount
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Collector Base Voltage
200 V
Maximum Emitter Base Voltage
7 V
Numar pini
4
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
9.1 x 38.2 x 25.5mm
Maximum Collector Emitter Saturation Voltage
1.5 V
Detalii produs
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.