Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
450 V
Tip pachet
TO-220
Timp montare
Through Hole
Maximum Power Dissipation
85 W
Minimum DC Current Gain
5
Transistor Configuration
Single
Maximum Collector Base Voltage
800 V
Maximum Emitter Base Voltage
9 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
9.15 x 10.4 x 4.6mm
Temperatura maxima de lucru
+150 °C
Tara de origine
Malaysia
Detalii produs
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Informatii despre stoc temporar indisponibile
€ 38,00
€ 0,76 Each (In a Tube of 50) (fara TVA)
€ 45,98
€ 0,92 Each (In a Tube of 50) (cu TVA)
50
€ 38,00
€ 0,76 Each (In a Tube of 50) (fara TVA)
€ 45,98
€ 0,92 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
450 V
Tip pachet
TO-220
Timp montare
Through Hole
Maximum Power Dissipation
85 W
Minimum DC Current Gain
5
Transistor Configuration
Single
Maximum Collector Base Voltage
800 V
Maximum Emitter Base Voltage
9 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
9.15 x 10.4 x 4.6mm
Temperatura maxima de lucru
+150 °C
Tara de origine
Malaysia
Detalii produs
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


