Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
800 V
Tip pachet
TO-220
Timp montare
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.4 x 4.6 x 15.75mm
Detalii produs
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Informatii despre stoc temporar indisponibile
€ 15,40
€ 0,77 Each (Supplied in a Tube) (fara TVA)
€ 18,63
€ 0,932 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
20
€ 15,40
€ 0,77 Each (Supplied in a Tube) (fara TVA)
€ 18,63
€ 0,932 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
20
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
800 V
Tip pachet
TO-220
Timp montare
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.4 x 4.6 x 15.75mm
Detalii produs
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


