Documente tehnice
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
800 V
Tip pachet
TO-220
Timp montare
Through Hole
Maximum Power Dissipation
70 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
10.4 x 4.6 x 15.75mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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Documente tehnice
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
800 V
Tip pachet
TO-220
Timp montare
Through Hole
Maximum Power Dissipation
70 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
10.4 x 4.6 x 15.75mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.