Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
700 V
Tip pachet
TO-247
Timp montare
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
20.15 x 15.75 x 5.15mm
Detalii produs
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Informatii despre stoc temporar indisponibile
€ 7,14
€ 3,57 Buc. (Intr-un pachet de 2) (fara TVA)
€ 8,64
€ 4,32 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 7,14
€ 3,57 Buc. (Intr-un pachet de 2) (fara TVA)
€ 8,64
€ 4,32 Buc. (Intr-un pachet de 2) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
2
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 2 - 2 | € 3,57 | € 7,14 |
| 4+ | € 3,36 | € 6,72 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
700 V
Tip pachet
TO-247
Timp montare
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
20.15 x 15.75 x 5.15mm
Detalii produs
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


