Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsMontare
Surface
Product Type
Diode
Tip pachet
SOT-23
Maximum Continuous Forward Current If
300mA
Peak Reverse Repetitive Voltage Vrrm
40V
Series
BAT54
Diode Configuration
Common Cathode
Rectifier Type
Schottky
Numar pini
3
Maximum Forward Voltage Vf
900mV
Peak Reverse Current Ir
100μA
Temperatura minima de lucru
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
1A
Peak Reverse Recovery Time trr
5ns
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Inaltime
1.4mm
Lungime
3.04mm
Automotive Standard
No
Detalii produs
Schottky Barrier Diodes, up to 1A, STMicroelectronics
High power, efficiency and density.
Diodes and Rectifiers, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 4,50
€ 0,09 Buc. (Intr-un pachet de 50) (fara TVA)
€ 5,44
€ 0,109 Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
€ 4,50
€ 0,09 Buc. (Intr-un pachet de 50) (fara TVA)
€ 5,44
€ 0,109 Buc. (Intr-un pachet de 50) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
50
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 50 - 200 | € 0,09 | € 4,50 |
| 250 - 450 | € 0,08 | € 4,00 |
| 500 - 1200 | € 0,07 | € 3,50 |
| 1250 - 2450 | € 0,07 | € 3,50 |
| 2500+ | € 0,06 | € 3,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsMontare
Surface
Product Type
Diode
Tip pachet
SOT-23
Maximum Continuous Forward Current If
300mA
Peak Reverse Repetitive Voltage Vrrm
40V
Series
BAT54
Diode Configuration
Common Cathode
Rectifier Type
Schottky
Numar pini
3
Maximum Forward Voltage Vf
900mV
Peak Reverse Current Ir
100μA
Temperatura minima de lucru
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
1A
Peak Reverse Recovery Time trr
5ns
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Inaltime
1.4mm
Lungime
3.04mm
Automotive Standard
No
Detalii produs
Schottky Barrier Diodes, up to 1A, STMicroelectronics
High power, efficiency and density.


