Semikron Bridge Rectifier, 30A, 1200V, 4-Pin
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
SemikronPeak Average Forward Current
30A
Bridge Type
Single Phase
Peak Reverse Repetitive Voltage
1200V
Timp montare
Chassis Mount
Tip pachet
G 12
Numar pini
4
Configuration
Single
Peak Non-Repetitive Forward Surge Current
370A
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-40 °C
Peak Forward Voltage
2.2V
Curentul de varf invers
5mA
Lungime
55mm
Dimensiuni
55 x 45 x 24mm
Inaltime
24mm
Latime
45mm
Detalii produs
MOSFETs - N-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.
P.O.A.
1
P.O.A.
Informatii despre stoc temporar indisponibile
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
SemikronPeak Average Forward Current
30A
Bridge Type
Single Phase
Peak Reverse Repetitive Voltage
1200V
Timp montare
Chassis Mount
Tip pachet
G 12
Numar pini
4
Configuration
Single
Peak Non-Repetitive Forward Surge Current
370A
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-40 °C
Peak Forward Voltage
2.2V
Curentul de varf invers
5mA
Lungime
55mm
Dimensiuni
55 x 45 x 24mm
Inaltime
24mm
Latime
45mm
Detalii produs
MOSFETs - N-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.