Documente tehnice
Specificatii
Marca
SemikronMaximum Continuous Collector Current
1.1 kA
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Tip pachet
SEMiX®3p
Configuration
Series
Timp montare
Through Hole
Channel Type
N
Numar pini
11
Transistor Configuration
Series
Dimensiuni
150 x 62.4 x 17mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+175 °C
PRICED TO CLEAR
Yes
Detalii produs
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 429,13
Buc. (fara TVA)
€ 510,66
Buc. (cu TVA)
1
€ 429,13
Buc. (fara TVA)
€ 510,66
Buc. (cu TVA)
1
Cumpara in pachete mari
Cantitate | Pret unitar |
---|---|
1 - 1 | € 429,13 |
2+ | € 404,98 |
Documente tehnice
Specificatii
Marca
SemikronMaximum Continuous Collector Current
1.1 kA
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Tip pachet
SEMiX®3p
Configuration
Series
Timp montare
Through Hole
Channel Type
N
Numar pini
11
Transistor Configuration
Series
Dimensiuni
150 x 62.4 x 17mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+175 °C
PRICED TO CLEAR
Yes
Detalii produs
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.