Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Semikron DanfossMaximum Continuous Collector Current
618 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Single
Tip pachet
SEMITRANS3
Timp montare
Panel Mount
Channel Type
N
Numar pini
5
Transistor Configuration
Single
Dimensiuni
106.4 x 61.4 x 30.5mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 277,13
€ 277,13 Buc. (fara TVA)
€ 335,33
€ 335,33 Buc. (cu TVA)
1
€ 277,13
€ 277,13 Buc. (fara TVA)
€ 335,33
€ 335,33 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
1
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 1 - 9 | € 277,13 |
| 10 - 19 | € 261,04 |
| 20 - 49 | € 245,47 |
| 50 - 249 | € 230,98 |
| 250+ | € 217,52 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Semikron DanfossMaximum Continuous Collector Current
618 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Single
Tip pachet
SEMITRANS3
Timp montare
Panel Mount
Channel Type
N
Numar pini
5
Transistor Configuration
Single
Dimensiuni
106.4 x 61.4 x 30.5mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


