Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Semikron DanfossMaximum Continuous Collector Current
232 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Tip pachet
SEMITRANS2
Configuration
Single
Timp montare
Panel Mount
Channel Type
N
Numar pini
5
Transistor Configuration
Single
Dimensiuni
94 x 34 x 30.1mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii despre stoc temporar indisponibile
€ 115,70
€ 115,70 Buc. (fara TVA)
€ 140,00
€ 140,00 Buc. (cu TVA)
1
€ 115,70
€ 115,70 Buc. (fara TVA)
€ 140,00
€ 140,00 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
1
| Cantitate | Pret unitar |
|---|---|
| 1 - 9 | € 115,70 |
| 10 - 19 | € 85,14 |
| 20+ | € 80,13 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Semikron DanfossMaximum Continuous Collector Current
232 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Tip pachet
SEMITRANS2
Configuration
Single
Timp montare
Panel Mount
Channel Type
N
Numar pini
5
Transistor Configuration
Single
Dimensiuni
94 x 34 x 30.1mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


