Documente tehnice
Specificatii
Marca
SemelabChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
125 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
7V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+200 °C
Lungime
4.06mm
Latime
5.08mm
Transistor Material
Si
Dimensiune celula
TetraFET
Inaltime
2.18mm
Tara de origine
United Kingdom
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Documente tehnice
Specificatii
Marca
SemelabChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
125 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
7V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+200 °C
Lungime
4.06mm
Latime
5.08mm
Transistor Material
Si
Dimensiune celula
TetraFET
Inaltime
2.18mm
Tara de origine
United Kingdom