Documente tehnice
Specificatii
Marca
SemelabChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
17.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+200 °C
Transistor Material
Si
Lungime
4.06mm
Latime
5.08mm
Number of Elements per Chip
1
Inaltime
2.18mm
Dimensiune celula
TetraFET
Tara de origine
United Kingdom
Detalii produs
RF MOSFET Transistors, Semelab
MOSFET Transistors, Semelab
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 30,32
Each (In a Tray of 50) (fara TVA)
€ 36,081
Each (In a Tray of 50) (cu TVA)
50
€ 30,32
Each (In a Tray of 50) (fara TVA)
€ 36,081
Each (In a Tray of 50) (cu TVA)
50
Documente tehnice
Specificatii
Marca
SemelabChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
17.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+200 °C
Transistor Material
Si
Lungime
4.06mm
Latime
5.08mm
Number of Elements per Chip
1
Inaltime
2.18mm
Dimensiune celula
TetraFET
Tara de origine
United Kingdom
Detalii produs