Documente tehnice
Specificatii
Marca
SemelabChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
65 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
17.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.08mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+200 °C
Transistor Material
Si
Lungime
4.06mm
Inaltime
2.18mm
Dimensiune celula
TetraFET
Tara de origine
United Kingdom
Detalii produs
RF MOSFET Transistors, Semelab
MOSFET Transistors, Semelab
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P.O.A.
50
P.O.A.
50
Documente tehnice
Specificatii
Marca
SemelabChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
65 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
17.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.08mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+200 °C
Transistor Material
Si
Lungime
4.06mm
Inaltime
2.18mm
Dimensiune celula
TetraFET
Tara de origine
United Kingdom
Detalii produs