Documente tehnice
Specificatii
Marca
SemelabChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-3
Montare
Through Hole
Numar pini
3
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
25mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
39mm
Dimensiune celula
ALFET
Inaltime
8.7mm
Tara de origine
United Kingdom
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Documente tehnice
Specificatii
Marca
SemelabChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-3
Montare
Through Hole
Numar pini
3
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
25mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
39mm
Dimensiune celula
ALFET
Inaltime
8.7mm
Tara de origine
United Kingdom