Documente tehnice
Specificatii
Marca
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Dimensiune celula
SCT2H12NZ
Tip pachet
TO-3PFM
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Lungime
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Latime
5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Inaltime
21mm
Forward Diode Voltage
4.3V
Detalii produs
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Informatii indisponibile despre stoc
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Buc. (Intr-un pachet de 2) (fara TVA)
€ 10,424
Buc. (Intr-un pachet de 2) (cu TVA)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 8 | € 8,76 | € 17,52 |
10+ | € 7,03 | € 14,06 |
Documente tehnice
Specificatii
Marca
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Dimensiune celula
SCT2H12NZ
Tip pachet
TO-3PFM
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Lungime
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Latime
5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Inaltime
21mm
Forward Diode Voltage
4.3V
Detalii produs