Documente tehnice
Specificatii
Marca
ROHMChannel Type
P
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
20 V
Dimensiune celula
RU1C001ZP
Tip pachet
SC-85
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
40 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
10 V
Latime
1.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.1mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Inaltime
0.95mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Thailand
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P.O.A.
200
P.O.A.
200
Documente tehnice
Specificatii
Marca
ROHMChannel Type
P
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
20 V
Dimensiune celula
RU1C001ZP
Tip pachet
SC-85
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
40 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
10 V
Latime
1.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.1mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Inaltime
0.95mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Thailand