ROHM RGE80TS65DGC13 Single IGBT, 63 A 650 V, 3-Pin TO-247GE, Through Hole

Nr. stoc RS: 646-601Producator: ROHMCod de producator: RGE80TS65DGC13
Vezi toate produsele din Tranzistoare IGBT

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)

Specificatii

Marca

ROHM

Maximum Continuous Collector Current

63 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

200 W

Number of Transistors

1

Configuration

Single

Tip pachet

TO-247GE

Timp montare

Through Hole

Channel Type

N

Numar pini

3

Informatii despre stoc temporar indisponibile

P.O.A.

1 Bag of 1 (fara TVA)

ROHM RGE80TS65DGC13 Single IGBT, 63 A 650 V, 3-Pin TO-247GE, Through Hole

2

Disponibil in multiplu de 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

1 Bag of 1 (fara TVA)

ROHM RGE80TS65DGC13 Single IGBT, 63 A 650 V, 3-Pin TO-247GE, Through Hole
Informatii despre stoc temporar indisponibile

2

Disponibil in multiplu de 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Informatii despre stoc temporar indisponibile

Incercati din nou mai tarziu

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)

Specificatii

Marca

ROHM

Maximum Continuous Collector Current

63 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

200 W

Number of Transistors

1

Configuration

Single

Tip pachet

TO-247GE

Timp montare

Through Hole

Channel Type

N

Numar pini

3