Documente tehnice
Specificatii
Marca
ROHMChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
QS6U24
Tip pachet
TSMT
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
1.8mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
1.7 nC @ 5 V (N Channel)
Inaltime
0.95mm
Tara de origine
Thailand
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P.O.A.
25
Documente tehnice
Specificatii
Marca
ROHMChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
QS6U24
Tip pachet
TSMT
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
1.8mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
1.7 nC @ 5 V (N Channel)
Inaltime
0.95mm
Tara de origine
Thailand