Documente tehnice
Specificatii
Marca
ROHMChannel Type
N
Maximum Continuous Drain Current
27 A, 80 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
HP8S36
Tip pachet
HSOP8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
13.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
22 W, 29 W
Maximum Gate Source Voltage
±128 V, ±20 V
Latime
5.8mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
4.8 nC @ 4.5 V (N Channel), 47 nC @ 4.5 V (N Channel)
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Tara de origine
Thailand
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Documente tehnice
Specificatii
Marca
ROHMChannel Type
N
Maximum Continuous Drain Current
27 A, 80 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
HP8S36
Tip pachet
HSOP8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
13.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
22 W, 29 W
Maximum Gate Source Voltage
±128 V, ±20 V
Latime
5.8mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
4.8 nC @ 4.5 V (N Channel), 47 nC @ 4.5 V (N Channel)
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Tara de origine
Thailand