Documente tehnice
Specificatii
Marca
ROHMTransistor Type
NPN
Maximum Collector Emitter Voltage
60 V
Tip pachet
DIP
Timp montare
Through Hole
Numar pini
16
Transistor Configuration
Common Emitter
Configuration
Array 7
Number of Elements per Chip
7
Minimum DC Current Gain
1000
Maximum Collector Emitter Saturation Voltage
1.6 V
Inaltime
3.74mm
Latime
6.5mm
Maximum Power Dissipation
1.25 W
Temperatura minima de lucru
-40 °C
Dimensiuni
19.4 x 6.5 x 3.74mm
Temperatura maxima de lucru
+85 °C
Lungime
19.4mm
Base Current
1.35mA
Detalii produs
Darlinton Transistor Arrays, ROHM
Bipolar Transistors, ROHM Semiconductor
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Documente tehnice
Specificatii
Marca
ROHMTransistor Type
NPN
Maximum Collector Emitter Voltage
60 V
Tip pachet
DIP
Timp montare
Through Hole
Numar pini
16
Transistor Configuration
Common Emitter
Configuration
Array 7
Number of Elements per Chip
7
Minimum DC Current Gain
1000
Maximum Collector Emitter Saturation Voltage
1.6 V
Inaltime
3.74mm
Latime
6.5mm
Maximum Power Dissipation
1.25 W
Temperatura minima de lucru
-40 °C
Dimensiuni
19.4 x 6.5 x 3.74mm
Temperatura maxima de lucru
+85 °C
Lungime
19.4mm
Base Current
1.35mA
Detalii produs