Documente tehnice
Specificatii
Marca
ROHMTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
12 V
Tip pachet
SOT-723
Timp montare
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Common Emitter
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
1.3 x 0.9 x 0.45mm
Temperatura maxima de lucru
+150 °C
Tara de origine
Japan
Detalii produs
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.
Bipolar Transistors, ROHM Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,09
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,107
Buc. (Intr-un pachet de 50) (cu TVA)
50
€ 0,09
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,107
Buc. (Intr-un pachet de 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
50 - 200 | € 0,09 | € 4,50 |
250 - 450 | € 0,05 | € 2,50 |
500 - 2450 | € 0,05 | € 2,50 |
2500 - 4950 | € 0,05 | € 2,50 |
5000+ | € 0,05 | € 2,50 |
Documente tehnice
Specificatii
Marca
ROHMTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
12 V
Tip pachet
SOT-723
Timp montare
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Common Emitter
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
1.3 x 0.9 x 0.45mm
Temperatura maxima de lucru
+150 °C
Tara de origine
Japan
Detalii produs
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.