Documente tehnice
Specificatii
Marca
ROHMTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
11 V
Tip pachet
SOT-723
Montare
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Common Emitter
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
500 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
1.3 x 0.9 x 0.45mm
Tara de origine
Japan
Detalii produs
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.
Bipolar Transistors, ROHM Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,15
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,178
Buc. (Intr-un pachet de 50) (cu TVA)
50
€ 0,15
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,178
Buc. (Intr-un pachet de 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
50 - 200 | € 0,15 | € 7,50 |
250 - 450 | € 0,13 | € 6,50 |
500 - 2450 | € 0,12 | € 6,00 |
2500 - 4950 | € 0,12 | € 6,00 |
5000+ | € 0,11 | € 5,50 |
Documente tehnice
Specificatii
Marca
ROHMTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
11 V
Tip pachet
SOT-723
Montare
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Common Emitter
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
500 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
1.3 x 0.9 x 0.45mm
Tara de origine
Japan
Detalii produs
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.