Documente tehnice
Specificatii
Marca
Renesas ElectronicsTransistor Type
NPN + PNP
Maximum DC Collector Current
65 mA
Maximum Collector Emitter Voltage
8 V
Tip pachet
SOIC
Timp montare
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Isolated
Maximum Collector Base Voltage
12 V
Maximum Emitter Base Voltage
5.5 V
Maximum Operating Frequency
8000 MHz
Numar pini
16
Number of Elements per Chip
5
Dimensiuni
1.5 x 10 x 4mm
Temperatura maxima de lucru
+125 °C
Tara de origine
Philippines
Detalii produs
Transistor Arrays, Intersil
Bipolar Transistors, Intersil
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
48
P.O.A.
48
Documente tehnice
Specificatii
Marca
Renesas ElectronicsTransistor Type
NPN + PNP
Maximum DC Collector Current
65 mA
Maximum Collector Emitter Voltage
8 V
Tip pachet
SOIC
Timp montare
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Isolated
Maximum Collector Base Voltage
12 V
Maximum Emitter Base Voltage
5.5 V
Maximum Operating Frequency
8000 MHz
Numar pini
16
Number of Elements per Chip
5
Dimensiuni
1.5 x 10 x 4mm
Temperatura maxima de lucru
+125 °C
Tara de origine
Philippines
Detalii produs