Documente tehnice
Specificatii
Marca
Renesas ElectronicsTransistor Type
NPN
Maximum Continuous Collector Current
4 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOT-32
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
2.5 V
Maximum Collector Cut-off Current
0.2mA
Temperatura minima de lucru
-65 °C
Inaltime
10.8mm
Dimensiuni
7.8 x 2.7 x 10.8mm
Temperatura maxima de lucru
+150 °C
Lungime
7.8mm
Latime
2.7mm
Detalii produs
NPN Darlington Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,58
€ 0,58 Buc. (fara TVA)
€ 0,69
€ 0,69 Buc. (cu TVA)
Standard
1
€ 0,58
€ 0,58 Buc. (fara TVA)
€ 0,69
€ 0,69 Buc. (cu TVA)
Standard
1
Cumpara in pachete mari
Cantitate | Pret unitar |
---|---|
1 - 1 | € 0,58 |
2 - 4 | € 0,55 |
5 - 9 | € 0,54 |
10 - 24 | € 0,52 |
25+ | € 0,49 |

Documente tehnice
Specificatii
Marca
Renesas ElectronicsTransistor Type
NPN
Maximum Continuous Collector Current
4 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOT-32
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
2.5 V
Maximum Collector Cut-off Current
0.2mA
Temperatura minima de lucru
-65 °C
Inaltime
10.8mm
Dimensiuni
7.8 x 2.7 x 10.8mm
Temperatura maxima de lucru
+150 °C
Lungime
7.8mm
Latime
2.7mm
Detalii produs
NPN Darlington Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
