Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-28FL, VEC8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
194 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Latime
2.3mm
Lungime
2.9mm
Number of Elements per Chip
2
Forward Diode Voltage
1.2V
Inaltime
0.73mm
Tara de origine
China
Detalii produs
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-28FL, VEC8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
194 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Latime
2.3mm
Lungime
2.9mm
Number of Elements per Chip
2
Forward Diode Voltage
1.2V
Inaltime
0.73mm
Tara de origine
China
Detalii produs