Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 (Peak) A, 6 (Continuous) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
1.5 V dc
Maximum Collector Cut-off Current
400µA
Dimensiuni
10.53 x 4.83 x 15.75mm
Inaltime
15.75mm
Latime
4.83mm
Maximum Power Dissipation
65 W
Frecventa minima de auto-rezonanta
-65 °C
Temperatura maxima de lucru
+150 °C
Lungime
10.53mm
Base Current
2A
Tara de origine
China
P.O.A.
Each (In a Tube of 50) (fara TVA)
50
P.O.A.
Each (In a Tube of 50) (fara TVA)
Informatii despre stoc temporar indisponibile
50
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 (Peak) A, 6 (Continuous) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
1.5 V dc
Maximum Collector Cut-off Current
400µA
Dimensiuni
10.53 x 4.83 x 15.75mm
Inaltime
15.75mm
Latime
4.83mm
Maximum Power Dissipation
65 W
Frecventa minima de auto-rezonanta
-65 °C
Temperatura maxima de lucru
+150 °C
Lungime
10.53mm
Base Current
2A
Tara de origine
China


