Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 (Peak) A, 6 (Continuous) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
1.5 V dc
Maximum Collector Cut-off Current
400µA
Dimensiuni
10.53 x 4.83 x 15.75mm
Inaltime
15.75mm
Latime
4.83mm
Maximum Power Dissipation
65 W
Frecventa minima de auto-rezonanta
-65 °C
Temperatura maxima de lucru
+150 °C
Lungime
10.53mm
Base Current
2A
Tara de origine
China
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€ 0,74
Each (In a Tube of 50) (fara TVA)
€ 0,881
Each (In a Tube of 50) (cu TVA)
50
€ 0,74
Each (In a Tube of 50) (fara TVA)
€ 0,881
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 0,74 | € 37,00 |
100 - 450 | € 0,51 | € 25,50 |
500 - 950 | € 0,48 | € 24,00 |
1000+ | € 0,46 | € 23,00 |
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 (Peak) A, 6 (Continuous) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
1.5 V dc
Maximum Collector Cut-off Current
400µA
Dimensiuni
10.53 x 4.83 x 15.75mm
Inaltime
15.75mm
Latime
4.83mm
Maximum Power Dissipation
65 W
Frecventa minima de auto-rezonanta
-65 °C
Temperatura maxima de lucru
+150 °C
Lungime
10.53mm
Base Current
2A
Tara de origine
China