Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 (Continuous) A, 15 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-218
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
20
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
0.7mA
Inaltime
20.35mm
Latime
4.9mm
Maximum Power Dissipation
80 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
15.2 x 4.9 x 20.35mm
Temperatura maxima de lucru
+150 °C
Lungime
15.2mm
Base Current
3A
Tara de origine
China
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Each (In a Tube of 30) (fara TVA)
€ 2,19
Each (In a Tube of 30) (cu TVA)
30
€ 1,84
Each (In a Tube of 30) (fara TVA)
€ 2,19
Each (In a Tube of 30) (cu TVA)
30
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Cantitate | Pret unitar | Per Tub |
---|---|---|
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120 - 480 | € 1,45 | € 43,50 |
510 - 990 | € 1,22 | € 36,60 |
1020+ | € 1,08 | € 32,40 |
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 (Continuous) A, 15 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-218
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
20
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
0.7mA
Inaltime
20.35mm
Latime
4.9mm
Maximum Power Dissipation
80 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
15.2 x 4.9 x 20.35mm
Temperatura maxima de lucru
+150 °C
Lungime
15.2mm
Base Current
3A
Tara de origine
China