Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
3 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
9.28 x 10.28 x 4.82mm
Temperatura maxima de lucru
+150 °C
Detalii produs
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
Informatii despre stoc temporar indisponibile
P.O.A.
Buc. (Intr-un pachet de 20) (fara TVA)
Standard
20
P.O.A.
Buc. (Intr-un pachet de 20) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
20
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
3 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
9.28 x 10.28 x 4.82mm
Temperatura maxima de lucru
+150 °C
Detalii produs
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.


