Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
TO-220
Timp montare
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.28 x 4.82 x 15.75mm
Detalii produs
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,90
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,071
Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 0,90
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,071
Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
TO-220
Timp montare
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.28 x 4.82 x 15.75mm
Detalii produs
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.