Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
5 A dc
Maximum Collector Emitter Voltage
80 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
80 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Inaltime
15.75mm
Latime
4.83mm
Maximum Power Dissipation
65 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
10.53 x 4.83 x 15.75mm
Temperatura maxima de lucru
+150 °C
Lungime
10.53mm
Tara de origine
China
P.O.A.
Buc. (Intr-un pachet de 25) (fara TVA)
Standard
25
P.O.A.
Buc. (Intr-un pachet de 25) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
25
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
5 A dc
Maximum Collector Emitter Voltage
80 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
80 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Inaltime
15.75mm
Latime
4.83mm
Maximum Power Dissipation
65 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
10.53 x 4.83 x 15.75mm
Temperatura maxima de lucru
+150 °C
Lungime
10.53mm
Tara de origine
China


