Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
60 V
Maximum Collector Emitter Saturation Voltage
4 V
Maximum Collector Cut-off Current
0.5mA
Inaltime
4.82mm
Latime
10.28mm
Maximum Power Dissipation
65 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
15.75 x 10.28 x 4.82mm
Temperatura maxima de lucru
+150 °C
Lungime
15.75mm
Detalii produs
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
50
P.O.A.
50
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
60 V
Maximum Collector Emitter Saturation Voltage
4 V
Maximum Collector Cut-off Current
0.5mA
Inaltime
4.82mm
Latime
10.28mm
Maximum Power Dissipation
65 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
15.75 x 10.28 x 4.82mm
Temperatura maxima de lucru
+150 °C
Lungime
15.75mm
Detalii produs
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.