Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
2 (Continuous) A, 4 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
500
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
2.5 V dc
Maximum Collector Cut-off Current
2mA
Latime
4.83mm
Maximum Power Dissipation
50 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
10.53 x 4.83 x 15.75mm
Temperatura maxima de lucru
+150 °C
Lungime
10.53mm
Base Current
50mA
Inaltime
15.75mm
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,54
Each (In a Tube of 50) (fara TVA)
€ 0,643
Each (In a Tube of 50) (cu TVA)
50
€ 0,54
Each (In a Tube of 50) (fara TVA)
€ 0,643
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 0,54 | € 27,00 |
100 - 450 | € 0,38 | € 19,00 |
500 - 950 | € 0,32 | € 16,00 |
1000 - 2450 | € 0,31 | € 15,50 |
2500+ | € 0,30 | € 15,00 |
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
2 (Continuous) A, 4 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
500
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
2.5 V dc
Maximum Collector Cut-off Current
2mA
Latime
4.83mm
Maximum Power Dissipation
50 W
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
10.53 x 4.83 x 15.75mm
Temperatura maxima de lucru
+150 °C
Lungime
10.53mm
Base Current
50mA
Inaltime
15.75mm
Tara de origine
China