Documente tehnice
Specificatii
Channel Type
N
Transistor Configuration
Dual
Maximum Gate Emitter Voltage
±20V
Temperatura minima de lucru
-40 °C
Configuration
Dual
Timp montare
Surface Mount
Numar pini
22
Temperatura maxima de lucru
+150 °C
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
186 W
Tip pachet
Q0BOOST
Baterii
3 x AAA BatteryDimensiuni
66.2 x 32.8 x 11.9mm
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 74,47
Each (Supplied in a Tray) (fara TVA)
€ 88,619
Each (Supplied in a Tray) (cu TVA)
24
€ 74,47
Each (Supplied in a Tray) (fara TVA)
€ 88,619
Each (Supplied in a Tray) (cu TVA)
24
Documente tehnice
Specificatii
Channel Type
N
Transistor Configuration
Dual
Maximum Gate Emitter Voltage
±20V
Temperatura minima de lucru
-40 °C
Configuration
Dual
Timp montare
Surface Mount
Numar pini
22
Temperatura maxima de lucru
+150 °C
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
186 W
Tip pachet
Q0BOOST
Baterii
3 x AAA BatteryDimensiuni
66.2 x 32.8 x 11.9mm