Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
109 A
Maximum Drain Source Voltage
60 V
Tip pachet
WDFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
7.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
3.15mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
3.15mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Inaltime
0.75mm
Dimensiune celula
NVTFS5C658NL
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,71
Buc. (Pe o rola de 1500) (fara TVA)
€ 0,845
Buc. (Pe o rola de 1500) (cu TVA)
1500
€ 0,71
Buc. (Pe o rola de 1500) (fara TVA)
€ 0,845
Buc. (Pe o rola de 1500) (cu TVA)
1500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
109 A
Maximum Drain Source Voltage
60 V
Tip pachet
WDFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
7.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
3.15mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
3.15mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Inaltime
0.75mm
Dimensiune celula
NVTFS5C658NL
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalii produs