Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
60 V
Tip pachet
LFPAK, SOT-669
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
43 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
4.25mm
Lungime
5mm
Typical Gate Charge @ Vgs
5.8 @ 10 V nC
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Inaltime
1.15mm
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.2V
Informatii indisponibile despre stoc
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3000
€ 0,34
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,405
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
60 V
Tip pachet
LFPAK, SOT-669
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
43 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
4.25mm
Lungime
5mm
Typical Gate Charge @ Vgs
5.8 @ 10 V nC
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Inaltime
1.15mm
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.2V