Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
200 A
Maximum Drain Source Voltage
40 V
Tip pachet
LFPAK8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4.9mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
5mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Inaltime
1.15mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,79
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,94
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,79
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,94
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
200 A
Maximum Drain Source Voltage
40 V
Tip pachet
LFPAK8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4.9mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
5mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Inaltime
1.15mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101