Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
123 A
Maximum Drain Source Voltage
80 V
Dimensiune celula
NVMFS6H818N
Tip pachet
DFN
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
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P.O.A.
1500
P.O.A.
1500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
123 A
Maximum Drain Source Voltage
80 V
Dimensiune celula
NVMFS6H818N
Tip pachet
DFN
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101