Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Inaltime
1.05mm
Dimensiune celula
NVMFS5C673NL
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,39
Buc. (Intr-un pachet de 20) (fara TVA)
€ 1,654
Buc. (Intr-un pachet de 20) (cu TVA)
20
€ 1,39
Buc. (Intr-un pachet de 20) (fara TVA)
€ 1,654
Buc. (Intr-un pachet de 20) (cu TVA)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
20 - 80 | € 1,39 | € 27,80 |
100 - 480 | € 0,97 | € 19,40 |
500 - 980 | € 0,82 | € 16,40 |
1000 - 1480 | € 0,79 | € 15,80 |
1500+ | € 0,76 | € 15,20 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Inaltime
1.05mm
Dimensiune celula
NVMFS5C673NL
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101