Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
71 A
Maximum Drain Source Voltage
60 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Inaltime
1.05mm
Dimensiune celula
NVMFS5C670NL
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,70
Buc. (Intr-un pachet de 20) (fara TVA)
€ 2,023
Buc. (Intr-un pachet de 20) (cu TVA)
20
€ 1,70
Buc. (Intr-un pachet de 20) (fara TVA)
€ 2,023
Buc. (Intr-un pachet de 20) (cu TVA)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
20 - 80 | € 1,70 | € 34,00 |
100 - 240 | € 1,34 | € 26,80 |
260 - 480 | € 1,29 | € 25,80 |
500 - 980 | € 1,24 | € 24,80 |
1000+ | € 1,19 | € 23,80 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
71 A
Maximum Drain Source Voltage
60 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Inaltime
1.05mm
Dimensiune celula
NVMFS5C670NL
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101