Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
71 A
Maximum Drain Source Voltage
60 V
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
20 nC @ 10 V
Latime
5.1mm
Lungime
6.1mm
Dimensiune celula
NVMFS5C670NL
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Inaltime
1.05mm
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Buc. (Pe o rola de 1500) (fara TVA)
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Buc. (Pe o rola de 1500) (cu TVA)
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€ 0,97
Buc. (Pe o rola de 1500) (fara TVA)
€ 1,154
Buc. (Pe o rola de 1500) (cu TVA)
1500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
71 A
Maximum Drain Source Voltage
60 V
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
20 nC @ 10 V
Latime
5.1mm
Lungime
6.1mm
Dimensiune celula
NVMFS5C670NL
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Inaltime
1.05mm