Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
6.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Lungime
5.1mm
Inaltime
1.05mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Malaysia
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P.O.A.
1500
P.O.A.
1500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
6.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Lungime
5.1mm
Inaltime
1.05mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Malaysia