Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
24.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
9.6 nC @ 10 V
Inaltime
2.38mm
Dimensiune celula
NVD5C684NL
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,39
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,654
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 1,39
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,654
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 1,39 | € 13,90 |
100 - 240 | € 0,86 | € 8,60 |
250 - 490 | € 0,83 | € 8,30 |
500 - 990 | € 0,80 | € 8,00 |
1000+ | € 0,78 | € 7,80 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
24.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
9.6 nC @ 10 V
Inaltime
2.38mm
Dimensiune celula
NVD5C684NL
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalii produs